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? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc november 2006 fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 fps tm is a trademark of fairchild semiconductor corporation. fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 green mode fairchild power switch (fps?) for quasi-resonant operation - low emi and high efficiency features ? optimized for quasi-resonant converter (qrc) ? low emi through variable frequency control and inherent frequency modulation ? high-efficiency through minimum voltage switching ? narrow frequency variation range over wide load and input voltage variation ? advanced burst-mode operation for low standby power consumption ? pulse-by-pulse current limit ? various protection functi ons: overload protection (olp), over-voltage prot ection (ovp), abnormal over-current protection (aocp), internal thermal shutdown (tsd) ? under-voltage lockout (uvlo) with hysteresis ? internal start-up circuit ? internal high-voltage sense fet (650v) ? built-in soft-start (15ms) applications ? power supply for dvp player and dvd recorder ? power supply for set-top box ? adapter ? auxiliary power supply for pc, lcd tv, and pdp tv description a quasi-resonant converter (qrc) generally shows lower emi and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. the fsq-series is an integrated pulse-width modulation (pwm) controller and sensefet specifically designed for quasi-resonant operation with minimal external components. the pwm controller includes an integrated fixed-frequency oscillator, under-voltage lockout, leading edge blanking (leb), optimized gate driver, internal soft-start, temperature-compensated pr ecise current sources for loop compensation, and self-protection circuitry. compared with discrete mosfet and pwm controller solution, the fsq-series can reduce total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. this device provides a basic platform that is well suited for cost-effective designs of quasi-resonant switching fly- back converters. ordering information notes: 1. the junction temperature can limit the maximum output power. 2. 230vac or 100/115vac with doubler. the maximum power with ccm operation. 3. typical continuous power in a non-ventilated enc losed adapter measured at 50c ambient temperature. 4. maximum practical continuous power in an open frame design at 50c ambient. 5. pb-free package per jedec j-std-020b. product number (5) pkg. operating temp. current limit r ds(on) max. maximum output power (1) replaces devices 230v ac 15% (2) 85-265v ac adapter (3) open frame (4) adapter (3) open frame (4) FSQ311 8-dip -25 to +85c 0.6a 19 7w 10w 6w 8w fsdl321 fsdm311 fsq0165rn 8-dip -25 to +85c 0.9a 10 10w 15w 9w 13w fsdl0165rn fsq0265rn 8-dip -25 to +85c 1.2a 6 14w 20w 11w 16w fsdm0265rn fsdm0265rnb fsq0365rn 8-dip -25 to +85c 1.5a 4.5 17.5w 25w 13w 19w fsdm0365rn rsdm0365rnb
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 2 application diagram figure 1. typical flyback application internal block diagram figure 2. internal block diagram v cc gnd drain sync v o pwm fb ac in v str fsq0365rn rev.00 8v/12v v ref s q q r v cc v ref i delay i fb v sd v ovp sync v ocp s q q r r 3r v cc good v cc drain fb gnd aocp gate driver v cc good leb 200ns pwm v burst 4 sync + - + - 0.7v/0.2v 2.5 s time delay (1.1v) soft- start 6v 6v 0.35/0.55 + - osc v str tsd 3 2 8 7 6 5 fsq0365rn rev.00 1
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 3 pin configuration figure 3. pin configuration (top view) pin definitions pin # name description 1gnd ground. this pin is the control ground and the sensefet source. 2v cc power supply. this pin is the positive supply input. this pin provides internal operating current for both start- up and steady-state operation. 3fb feedback. this pin is internally connected to the inverting input of the pwm comparator. the collector of an opto-coupl er is typically tied to this pin. for stable operation, a capacitor should be placed between this pin and gnd. if the voltage of this pin reaches 6v, the overload protection triggers, which shuts down the fps. 4 sync sync. this pin is internally connected to the sync-detect comparator for quasi- resonant switching. in normal quasi-reso nant operation, the threshold of the sync comparator is 0.7v/0.2v. 5v str start-up. this pin is connected directly to the high-voltage dc link. at start-up, the internal high-voltage current source supplies internal bias and charges the external capacitor connected to the v cc pin. once v cc reaches 12v, the in- ternal current source is disabled. 6drain sensefet drain. high-voltage power sensefet drain connection. 7drain sensefet drain. high-voltage power sensefet drain connection. 8drain sensefet drain. high-voltage power sensefet drain connection. gnd v cc sync v str 8-dip fb d d d fsq0365rn rev.00
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 4 absolute maximum ratings the ?absolute maximum ratings? are those values beyond wh ich the safety of the device cannot be guaranteed. the device should not be operated at these limits. the parametric values defined in the electrical characteristics tables are not guaranteed at the absolute maximum ratings. t a = 25c, unless otherwise specified. notes: 6. repetitive rating: pulse width limi ted by maximum junction temperature. 7. l=14mh, starting t j =25c. 8. meet s jedec standards jesd 22-a114 and 22-a115. thermal impedance (9) notes: 9. all items are tested with the standards jesd 51-2 and 51-10 (dip). 10. free-standing, with no heat-s ink, under natural convection. 11. infinite cooling condition - refer to the semi g30-88. 12. measured on the pkg top surface. symbol parameter min. max. unit v str v str pin voltage 500 v v ds drain pin voltage 650 v v cc supply voltage 20 v v fb feedback voltage range -0.3 9.0 v v sync sync pin voltage -0.3 9.0 v i dm drain current pulsed (6) fsq0365rn 12 a fsq0265rn 8 fsq0165rn 4 FSQ311 1.5 e as single pulsed avalanche energy (7) fsq0365rn 230 mj fsq0265rn 140 fsq0165rn 50 FSQ311 10 p d total power dissipation 1.5 w t j operating junction temperat ure internally limited c t a operating ambient temperature -25 85 c t stg storage temperature -55 150 c esd c apability, hbm m odel (8) class1 c esd c apability, machine m odel (8) class b symbol parameter value unit 8-dip ja (10) junction-to-ambient thermal resistance 80 c/w jc (11) junction-to-case thermal resistance 20 jt (12) junction-to-top thermal resistance 35
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 5 electrical characteristics t a = 25 c unless otherwise specified. symbol parameter condition min. typ. max. unit sensefet section bv dss drain source breakdown voltage v cc = 0v, i d = 100a 650 v i dss zero-gate-voltage drain current v ds = 560v 100 a r ds(on) drain-source on- state resistance fsq0365rn t j = 25c, i d = 0.5a 3.5 4.5 fsq0265rn 5.0 6.0 fsq0165rn 8.0 10.0 FSQ311 14.0 19.0 c ss input capacitance fsq0365rn v gs = 0v, v ds = 25v, f = 1mhz 315 pf fsq0265rn 550 fsq0165rn 250 FSQ311 162 c oss output capacitance fsq0365rn v gs = 0v, v ds = 25v, f = 1mhz 47 pf fsq0265rn 38 fsq0165rn 25 FSQ311 18 c rss reverse transfer capacitance fsq0365rn v gs = 0v, v ds = 25v, f = 1mhz 9.0 pf fsq0265rn 17.0 fsq0165rn 10.0 FSQ311 3.8 t d(on) turn-on delay time fsq0365rn v dd = 350v, i d = 25ma 11.2 ns fsq0265rn 20.0 fsq0165rn 12.0 FSQ311 9.5 t r rise time fsq0365rn v dd = 350v, i d = 25ma 34 ns fsq0265rn 15 fsq0165rn 4 FSQ311 19 t d(off) turn-off delay time fsq0365rn v dd = 350v, i d = 25ma 28.3 ns fsq0265rn 55.0 fsq0165rn 30.0 FSQ311 33.0 t f fall time fsq0365rn v dd = 350v, i d = 25ma 32 ns fsq0265rn 25 fsq0165rn 10 FSQ311 42
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 6 electrical characteristics (continued) t a = 25 c unless otherwise specified. notes: 13. though guaranteed, it is not tested in the mass production. 14. propagation delay in the control ic. 15. include gate turn-on time. symbol parameter condition min. typ. max. unit control section t on.max maximum on time t j = 25c 10.5 12.0 13.5 sec t b blanking time 13.2 15.0 16.8 sec t w detection time window t j = 25c, v sync = 0v 3.0 sec f s initial switching fr equency 50.5 55.6 61.7 khz f s switching frequency variation (13) -25c < t j < 85c 5 10 % i fb feedback source current v fb = 0v 700 900 1100 a d min minimum duty cycle v fb = 0v 0 % v start uvlo threshold voltage 11 12 13 v v stop after turn-on 7 8 9 v t s/s internal soft-start time with free-running frequency 15 ms burst-mode section v burh burst-mode voltages t j = 25c, t pd = 200ns (14) 0.45 0.55 0.65 v v burl 0.25 0.35 0.45 v hysteresis 200 mv protection section i limit peak current limit fsq0365rn t j = 25c, di/dt = 240ma/sec 1.32 1.50 1.68 a fsq0265rn t j = 25c, di/dt = 200ma/sec 1.06 1.20 1.34 fsq0165rn t j = 25c, di/dt = 150ma/sec 0.8 0.9 1.0 FSQ311 t j = 25c, di/dt = 100ma/sec 0.53 0.60 0.67 v sd shutdown feedback voltage v cc = 15v 5.5 6.0 6.5 v i delay shutdown delay current v fb = 5v 4 5 6 a t leb leading-edge blanking time (13) 200 ns v ovp over-voltage protection v cc = 15v, v fb = 2v 5.5 6.0 6.5 v t ovp over-voltage protection blanking time 2 3 4 sec t sd thermal shutdown temperature (13) 125 140 155 c sync section v sh sync threshold voltage 0.55 0.70 0.85 v v sl 0.14 0.20 0.26 v t sync sync delay time (13)(15) 300 ns total device section i op operating supply current (control part only) v cc = 15v 1 3 5 ma i start start current v cc = v start - 0.1v (before v cc reaches v start ) 270 360 450 a i ch start-up charging current v cc = 0v, v str = min. 40v 0.65 0.85 1.00 ma v str minimum v str supply voltage 26 v
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 7 comparison between fsdm0x65rnb and fsq-series function fsdm0x65rnb fsq-series fsq-series advantages operation method constant frequency pwm quasi-resonant operation ? improved efficiency by valley switching ? reduced emi noise emi reduction frequency modulation valley switching & inherent frequency modulation ? reduce emi noise by two ways burst-mode operation fixed burst peak advanced burst-mode ? improved standby power by valley switch- ing also in burst-mode ? because the current peak during burst operation is dependent on v fb , it is easier to solve audible noise protection aocp ? improved reliability through precise abnor- mal over-current protection
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 8 typical performance characteristics these characteristic graphs are normalized at t a = 25c. figure 4. operating supply current (i op ) vs. t a figure 5. uvlo start threshold voltage (v start ) vs. t a figure 6. uvlo stop threshold voltage (v stop ) vs. t a figure 7. start-up charging current (i ch ) vs. t a figure 8. initial switching frequency (f s ) vs. t a figure 9. maximum on time (t on.max ) vs. t a -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c]
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 9 typical performance characteristics (continued) these characteristic graphs are normalized at t a = 25c. figure 10. blanking time (t b ) vs. t a figure 11. feedback source current (i fb ) vs. t a figure 12. shutdown delay current (i delay ) vs. t a figure 13. burst-mode high threshold voltage (v burh ) vs. t a figure 14. burst-mode low threshold voltage (v burl ) vs. t a figure 15. peak current limit (i lim ) vs. t a -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c]
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 10 typical performance characteristics (continued) these characteristic graphs are normalized at t a = 25c. figure 16. sync high threshold voltage (v sh ) vs. t a figure 17. sync low threshold voltage (v sl ) vs. t a figure 18. shutdown feedback voltage (v sd ) vs. t a figure 19. over-voltage protection (v ov ) vs. t a -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c]
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 11 functional description 1. startup: at startup, an internal high-voltage current source supplies the internal bias and charges the external capacitor (c a ) connected to the v cc pin, as illustrated in figure 20. when v cc reaches 12v, the fps begins switching and the internal high-voltage current source is disabled. the fps continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless v cc goes below the stop voltage of 8v. figure 20. start-up circuit 2. feedback control: fps employs current mode control, as shown in figure 21. an opto-coupler (such as the fod817a) and shunt regulator (such as the ka431) are typically used to impl ement the feedback network. comparing the feedback voltage with the voltage across the r sense resistor makes it po ssible to control the switching duty cycle. when the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5v, the opto-coupler led current increases, thus pulling down the feedback voltage and reducing the duty cycle. this event typically happens when the input voltage is increased or the output load is decreased. 2.1 pulse-by-pulse current limit: because current mode control is employed, t he peak current through the sensefet is limited by t he inverting input of pwm comparator (v fb *), as shown in figure 21. assuming that the 0.9ma current source flows only through the internal resistor (3r + r = 2.8k), the cathode voltage of diode d2 is about 2.5v. since d1 is blocked when the feedback voltage (v fb ) exceeds 2.5v, the maximum voltage of the cathode of d2 is clamped at this voltage, thus clamping v fb *. therefore, the peak value of the current through the sensefet is limited. 2.2 leading edge blanking (leb): at the instant the internal sensefet is turned on, a high-current spike usually occurs through the sensefet, caused by primary-side capacitance a nd secondary-side rectifier reverse recovery. excessi ve voltage across the r sense resistor would lead to incorrect feedback operation in the current mode pwm control. to counter this effect, the fps employs a leading edge blanking (leb) circuit. this circuit inhibits the pwm comparator for a short time (t leb ) after the sensefet is turned on. figure 21. pulse-width-mo dulation (pwm) circuit 3. synchronization: the fsq-series employs a quasi- resonant switching technique to minimize the switching noise and loss. the basic waveforms of the quasi- resonant converter are shown in figure 22. to minimize the mosfet's switching lo ss, the mosfet should be turned on when the drain voltage reaches its minimum value, as shown in figure 22. the minimum drain voltage is indirectly det ected by monitoring the v cc winding voltage, as shown in figure 22. figure 22. quasi-resonant switching waveforms 8v/12v v ref internal bias v cc v str i ch v cc good v dc c a fsq0365rn rev.00 2 5 3 osc v cc v ref i delay i fb v sd r 3r gate driver olp d1 d2 + v fb * - v fb ka431 c b v o fod817a r sense sensefet fsq0365rn rev. 00 v dc v ro v ro v ds t f 0.7v v sync 300ns delay 0.2v on on v ovp (6v) fsq0365rn rev.00 mosfet gate
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 12 4. protection circuits: the fsq-series has several self-protective functions, such as overload protection (olp), abnormal ov er-current protection (aocp), over- voltage protection (ovp), and thermal shutdown (tsd). all the protection s are implemented as auto- restart mode. once the fa ult condition is detected, switching is terminated and the sensefet remains off. this causes v cc to fall. when v cc falls down to the under-voltage lockout (uvlo) stop voltage of 8v, the protection is reset and start-up circuit charges v cc capacitor. when the v cc reaches the start voltage of 12v, the fsq-series resumes normal operation. if the fault condition is not removed, the sensefet remains off and v cc drops to stop voltage again. in this manner, the auto-restart can alternately enable and disable the switching of the power sensef et until the fault condition is eliminated. because these protection circuits are fully integrated into the ic without external components, the reliability is improved without increasing cost. figure 23. auto restar t protection waveforms 4.1 overload protection (olp): overload is defined as the load current exceeding its normal level due to an unexpected abnormal event. in this situation, the protection circuit should trigger to protect the smps. however, even when the smps is in the normal operation, the overload protection circuit can be triggered during the load transition. to avoid this undesired operation, the over load protection circuit is designed to trigger only after a specified time to determine whether it is a tr ansient situation or a true overload situation. becaus e of the pulse-by-pulse current limit capability, the maximum peak current through the sense fet is limited, and therefore the maximum input power is restricted with a given input voltage. if the output consumes more than this maximum power, the output voltage (v o ) decreases below the set voltage. this reduces the current through the opto- coupler led, which also reduces the opto-coupler transistor current, thus increasing the feedback voltage (v fb ). if v fb exceeds 2.8v, d1 is blocked and the 5a current source starts to charge cb slowly up to v cc . in this condition, v fb continues increasing until it reaches 6v, when the switching operation is terminated, as shown in figure 24. the delay time for shutdown is the time required to charge cb from 2.8v to 6v with 5a. a 20 ~ 50ms delay time is typical for most applications. figure 24. overload protection 4.2 abnormal over-current protection (aocp): when the secondary rectifier diodes or the transformer pins are shorted, a steep current with extremely high-di/dt can flow through the sensefet during the leb time. even though the fsq-series has olp (overload protection), it is not enough to protect the fsq-series in that abnormal case, since severe current stress is imposed on the sensefet until olp triggers. the fsq-series has an internal aocp (abnormal over-current protection) circuit as shown in figure 25. when the gate turn-on signal is applied to the power sensefet, the aocp block is enabled and monitors the current through the sensing resistor. the voltage across the resistor is compared with a preset aocp level. if the sensing resistor voltage is greater than the aocp level, the set signal is applied to the latch, resulting in the shutdown of the smps. figure 25. abnormal over-current protection fault situation 8v 12v v cc v ds t fault occurs fault removed normal operation normal operation power on fsq0365rn rev. 00 v fb t 2.8v 6.0v overload protection t 12 = c fb *(6.0-2.8)/i delay t 1 t 2 fsq0365rn rev.00 1 s q q r osc r 3r gnd gate driver leb 200ns pwm + - v ocp aocp r sense fsq0365rn rev.00
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 13 4.3 over-voltage protection (ovp): if the secondary side feedback circuit malfunctions or a solder defect causes an opening in the feedback path, the current through the opto-coupler transistor becomes almost zero. then, v fb climbs up in a similar manner to the overload situation, forcing the preset maximum current to be supplied to the smps until the overload protection triggers. because more energy than required is provided to the output, the output voltage may exceed the rated voltage before the overload protection triggers, resulting in the breakdown of the devices in the secondary side. to prevent this situation, an ovp circuit is employed. in general, the peak voltage of the sync signal is proportional to the output voltage and the fsq-series uses a sync signal instead of directly monitoring the output voltage. if the sync signal exceeds 6v, an ovp is triggered, shutting down the smps. to avoid undesired triggering of ovp during normal operation, the peak voltage of the sync signal should be designed below 6v. 4.4 thermal shutdown (tsd): the sensefet and the control ic are built in one package. this makes it easy for the control ic to detect the abnormal over temperature of the sensefet. if the temperature exceeds ~150c, the thermal shutdown triggers. 5. soft-start: the fps has an internal soft-start circuit that increases pwm comparator inverting input voltage with the sensefet current slowly after it starts up. the typical soft-start time is 15ms, the pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. the voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage. this mode helps prevent transformer saturation and reduces stress on the secondary diode during startup. 6. burst operation: to minimize power dissipation in standby mode, the fps enters burst-mode operation. as the load decreases, the feedback voltage decreases. as shown in figure 26, the device automatically enters burst-mode when the feedback voltage drops below v burl (350mv). at this point, switching stops and the output voltages start to drop at a rate dependent on standby current load. this causes the feedback voltage to rise. once it passes v burh (550mv), switching resumes. the feedback voltage then falls and the process repeats. burst-mode operation alternately enables and disables switching of the power sensefet, thereby reducing switching loss in standby mode. figure 26. waveforms of burst operation 7. switching frequency limit: to minimize switching loss and emi (electromagnetic interference), the mosfet turns on when the drain voltage reaches its minimum value in quasi-resonant operation. however, this causes switching frequency to increases at light load conditions. as the load decreases, the peak drain current diminishes and the switching frequency increases. this results in severe switching losses at light-load condition, as well as intermittent switching and audible noise. because of these problems, the quasi-resonant converter topology has limitations in a wide range of applications. to overcome this problem, fsq-series employs a frequency-limit function, as shown in figures 27 and 28. once the sensefet is turned on, the next turn-on is prohibited during the blanking time (t b ). after the blanking time, the controller finds the valley within the detection time window (t w ) and turns on the mosfet, as shown in figures 27 and 28 (cases a, b, and c). if no valley is found during t w , the internal sensefet is forced to turn on at the end of t w (case d). therefore, our devices have a minimum switching frequency of 55khz and a maximum switching frequency of 67khz, as shown in figure 28. v fb v ds 0.35v 0.55v i ds v o v o set time switching disabled t1 t2 t3 switching disabled t4 fsq0365rn rev.00
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 14 figure 27. qrc operation with limited frequency figure 28. switching frequency range t s max =18 s t s max =18 s t b =15 s t s t b =15 s t s t s i ds i ds i ds i ds a b c d t w =3 s t b =15 s t b =15 s i ds i ds i ds i ds fsq0365rn rev. 00 55khz 67khz 59khz burst mode constant frequency d c b a p o when the resonant period is 2 s fsq0365rn rev. 00
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 15 application information features ? high efficiency ( >77% at universal input) ? low standby mode power consumption (<1w at 230v ac input and 0.5w load) ? reduce emi noise through quasi-resonant operation ? enhanced system reliability through various protection functions ? internal soft-start (15ms) key design notes ? the delay time for overload protection is designed to be about 30ms with c107 of 47nf. if faster/slower triggering of olp is required, c107 can be changed to a smaller/larger value (eg. 100nf for 60ms). ? the input voltage of v sync must be higher than -0.3v. by proper voltage sharing by r106 & r107 resistors, the input voltage can be adjusted. ? the smd-type 100nf capacitor must be placed as close as possible to v cc pin to avoid malfunction by abrupt pul- sating noises and to improved surge immunity. 1. schematic figure 29. demo circuit application fps device input voltage range rated output power output voltage (max. current) dvd player power supply fsq0365rn 85-265v ac 19w 5.1v (1.0a) 3.4v (1.0a) 12v (0.4a) 16v (0.3a) 3 4 c102 100nf,275v ac lf101 40mh c101 100nf 275v ac f101 fuse c103 33 f 400v r102 56k ? c104 10nf 630v d101 1n 4007 ic101 fsq0365rn c105 47nf 50v c107 22 f 50v d102 1n 4004 r103 5 ? 1 2 3 4 5 8 9 6 12 10 11 t101 eer2828 d201 uf4003 c201 470 f 35v c202 470 f 35v l201 l203 l204 d202 uf4003 c203 470 f 35v c204 470 f 35v c206 1000 f 10v c205 1000 f 10v d203 sb360 d204 sb360 c207 1000 f 10v c208 1000 f 10v r201 510 ? r202 1k ? r203 6.2k ? r204 20k ? c209 100nf r205 6k ? ic202 fod817a bd101 bridge diode l202 v str sync fb v cc drain gnd 6 1 2 3 4 5 1 2 drain drain 7 8 ic201 ka431 16v, 0.3a 12v, 0.4a 5.1v, 1a 3.4v, 1a r104 12k ? tnr 10d471k r105 100k ? r106 6.2k ? c302 3.3nf ac in c106 100nf smd d103 1n4148 c110 33pf 50v zd101 1n4746a r107 6.2k ? rt101 5d-9 r108 62 ? c209 47pf c210 47pf fsq0365rn rev:00
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 16 2. transformer figure 30. transformer schematic diagram 3. winding specification 4. electrical characteristics 5. core & bobbin ? core: eer2828 (ae=86.66mm 2 ) ? bobbin: eer2828 no pin (s f) wire turns winding method n p /2 3 20.25 1 50 center solenoid winding insulation: polyester tape t = 0.050mm, 2 layers n 3.4v 9 80.33 2 4 center solenoid winding insulation: polyester tape t = 0.050mm, 2 layers n 5v 6 90.33 1 2 center solenoid winding insulation: polyester tape t = 0.050mm, 2 layers n a 4 50.25 1 16 center solenoid winding insulation: polyester tape t = 0.050mm, 2 layers n 12v 10 12 0.33 3 14 center solenoid winding insulation: polyester tape t = 0.050mm, 3 layers n 16v 11 12 0.33 3 18 center solenoid winding insulation: polyester tape t = 0.050mm, 2 layers n p /2 2 10.25 1 50 center solenoid winding insulation: polyester tape t = 0.050mm, 2 layers pin specification remarks inductance 1 - 3 1.4mh 10% 100khz, 1v leakage 1 - 3 25h max. short all other pins eer2828 n 12v 1 6 7 8 9 10 11 12 n 16v n 5.1v n 3.4v n p /2 n a 2 3 4 5 n p /2 n 16v n 12v n a n 5.1v n 3.4v n p /2 n p /2 6mm 3mm fsq0365rn rev: 00
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 17 6. demo board part list part value note part value note resistor inductor r102 56k 1w l201 10h r103 5 1/2w l202 10h r104 12k 1/4w l203 4.9h r105 100k 1/4w l204 4.9h r106 6.2k 1/4w diode r107 6.2k 1/4w d101 in4007 r108 62 1w d102 in4004 r201 510 1/4w zd101 1n4746a r202 1k 1/4w d103 1n4148 r203 6.2k 1/4w d201 uf4003 r204 20k 1/4w d202 uf4003 r205 6k 1/4w d203 sb360 capacitor d204 sb360 c101 100nf/275v ac box capacitor c102 100nf/275v ac box capacitor ic c103 33f/400v electrolytic capacitor ic101 fsq0365rn fps? c104 10nf/630v film capacitor ic201 ka431 (tl431) voltage reference c105 47nf/50v mono capacitor ic202 fod817a opto-coupler c106 100nf/50v smd (1206) fuse c107 22f/50v electrolytic capacitor fuse 2a/250v c110 33pf/50v ceramic capacitor ntc c201 470f/35v electrolytic capacitor rt101 5d-9 c202 470f/35v electrolytic capacitor bridge diode c203 470f/35v electrolytic capacitor bd101 2kbp06m2n257 bridge diode c204 470f/35v electrolytic capacitor line filter c205 1000f/10v electrolytic capacitor lf101 40mh c206 1000f/10v electrolytic capacitor transformer c207 1000f/10v electrolytic capacitor t101 c208 1000f/10v electrolytic capacitor varistor c209 100nf /50v ceramic capacitor tnr 10d471k
fsq0365rn, fsq0265rn, fsq0165 rn, FSQ311 green m ode fairchild power s witch (fps?) for qrc ? 2006 fairchild semiconductor corporation www.fairchildsemi.com fsq0365rn, fsq0265rn, fsq0165rn, FSQ311 rev. 1.0.0 18 package dimensions 8-dip dimensions are in millimeters unless otherwise noted. september 1999, rev b 6.40 0.20 3.30 0.30 0.130 0.012 3.40 0.20 0.134 0.008 #1 #4 #5 #8 0.252 0.008 9.20 0.20 0.79 2.54 0.100 0.031 () 0.46 0.10 0.018 0.004 0.060 0.004 1.524 0.10 0.362 0.008 9.60 0.378 max 5.08 0.200 0.33 0.013 7.62 0~15 0.300 max min 0.25 +0.10 ?0.05 0.010 +0.004 ?0.002 8dip_dim.pdf
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